SEMICONDUCTOR MULTI-LAYER SUBSTRATE, SEMICONDUCTOR ELEMENT, AND PRODUCTION METHOD THEREFOR

摘要

Provided is a semiconductor multi-layer substrate having a multi-layer semiconductor layer and a substrate comprising Si, in which said multi-layer semiconductor layer comprises: an active layer comprising a nitride semiconductor; a first warp control layer that is formed between the substrate and the active layer and that gives a predetermined warp to the substrate; and a second warp control layer that comprises a nitride semiconductor, and in which the warp addition amount per unit film thickness is less than that of the first warp control layer. The overall film thickness of this multi-layer semiconductor layer is 4 µm or more. Also provided is a semiconductor multi-layer substrate having a multi-layer semiconductor layer and a substrate comprising Si, in which said multi-layer semiconductor layer comprises: a first warp control layer that is grown on the substrate, comprises a nitride semiconductor, and gives a predetermined warp to the substrate; a second warp control layer that is grown on the first warp control layer, and in which the warp addition amount per unit film thickness is less than that of the first warp control layer; and an active layer that is grown on the second warp control layer and comprises a nitride semiconductor. The overall film thickness of the multi-layer semiconductor layer is 4 µm or more.