发明名称 DIRECT BANDGAP SUBSTRATES AND METHODS OF MAKING AND USING
摘要 An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors. Applications can include display technologies, light detection, MEMS, chemical sensors, or piezoelectric systems. An LED array can provide structured illumination, such as for a light and pattern source for projection displays, such as without requiring spatial light modulation (SLM). An example can combine light from separate monolithic light projector chips, such as providing different component colors. An example can provide full color from a single monolithic light projector chip, such as including selectively deposited phosphors, such as to contribute individual component colors to an overall color of a pixel.
申请公布号 US2013240880(A1) 申请公布日期 2013.09.19
申请号 US201313890611 申请日期 2013.05.09
申请人 THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK 发明人 LEE VINCENT WING-HO;KYMISSIS IOANNIS
分类号 H01L33/26;H01L33/00 主分类号 H01L33/26
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