发明名称 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 After performing a pretreatment step of coating an organic solvent mixed with a polymeric organic compound over a substrate having a tungsten film formed on the surface of the substrate, a chemically amplified resist is coated to form a resist pattern. Further, a ratio of a C1s peak intensity to a W4d peak intensity measured by XPS is 0.1 or mote at the surface of the tungsten film after the pretreatment step and before coating the chemically amplified resist.
申请公布号 US2013244146(A1) 申请公布日期 2013.09.19
申请号 US201313757934 申请日期 2013.02.04
申请人 HITACHI, LTD. 发明人 KAKUTA KAZUYUKI;ANDO TOSHIO;HIRUMA KENJI;ONOZUKA TOSHIHIKO;KATSUYAMA KIYOMI;SATOH KIYOHIKO;IIDA YASUSHI
分类号 G03F7/20 主分类号 G03F7/20
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