发明名称 |
Selective Atomic Layer Depositions |
摘要 |
Provided are methods of selectively depositing an atomic layer deposition film on a substrate having two different surfaces. Also provided are methods of depositing TaN selectively onto a dielectric material versus a metal surface. |
申请公布号 |
US2013243956(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201213420146 |
申请日期 |
2012.03.14 |
申请人 |
MA PAUL F.;APPLIED MATERIALS, INC. |
发明人 |
MA PAUL F. |
分类号 |
C23C16/06;C23C16/455 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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