发明名称 SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target, in particular a sputtering target for FPD, which can suppress the occurrence of nodules and abnormal discharge even during continuous sputtering, and can provide a film in that there is no difference between the characteristics of a film formed on a substrate opposing to a clearance part and the characteristics of a film formed on the other part, that is, the uniformity of film characteristics is high.SOLUTION: A sputtering target is configured by arranging a plurality of split targets 2 on a backing plate 4 and joining the split targets 2 to the backing plate 4. The sputtering target is characterized in that a clearance part between the arranged split targets 2 is covered or filled with one material selected from a tape or sheet composed of an organic material or a pipe or rod-like material composed of an organic material.
申请公布号 JP2013185160(A) 申请公布日期 2013.09.19
申请号 JP20120048677 申请日期 2012.03.06
申请人 JX NIPPON MINING & METALS CORP 发明人 OSADA KOZO;KURIHARA TOSHIYA
分类号 C23C14/34;H01L21/363 主分类号 C23C14/34
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