| 摘要 |
PROBLEM TO BE SOLVED: To suppress operation of a parasitic MOSFET formed under a bird's beak of a LOCOS oxide film without separately injecting a P-type impurity into a semiconductor layer in NchMOSFET arranged in an element region surrounded by the LOCOS oxide film formed in the semiconductor layer on an insulating layer.SOLUTION: A gate electrode 19 is formed of polysilicon having a P-type polysilicon portion 19a and an N-type polysilicon portion 19b. The gate electrode 19 is disposed on a LOCOS oxide film 9 extending from a P-type channel region 15 in a channel width direction. The P-type polysilicon portion 19a of the gate electrode 19 is disposed across from the LOCOS oxide film 9 to the P-type channel region 15 so as to stride over at least a bird's beak 9a of the LOCOS oxide film 9. The N-type polysilicon portion 19b of the gate electrode 19 is disposed on the P-type channel region 15. |
