发明名称 SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target which can achieve a high sputter rate and can form a TiOfilm having a high conductivity and a high light transmittance, and to provide a production method for the same.SOLUTION: A sputtering target of a titanium oxide comprises a sintered compact in which, in X-ray diffraction, peaks of TiOphase of a rutile crystal structure and of a titanium oxide phase of a magneli phase are observed, and which has an O/Ti atomic ratio in the range of 1.85-1.95. The observed maximum peak is the peak of the titanium oxide phase of the magneli phase, and the average particle size of the sintered compact is 2 μm or more.
申请公布号 JP2013185177(A) 申请公布日期 2013.09.19
申请号 JP20120049506 申请日期 2012.03.06
申请人 MITSUBISHI MATERIALS CORP 发明人 UMEMOTO KEITA;SAITO ATSUSHI
分类号 C23C14/34;C04B35/46 主分类号 C23C14/34
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