发明名称 |
FINFET AND FABRICATING METHOD THEREOF |
摘要 |
A fin-shaped field-effect transistor process includes the following steps. A substrate is provided. A first fin-shaped field-effect transistor and a second fin-shaped field-effect transistor are formed on the substrate, wherein the first fin-shaped field-effect transistor includes a first metal layer and the second fin-shaped field-effect transistor includes a second metal layer. A treatment process is performed on the first fin-shaped field-effect transistor to adjust the threshold voltage of the first fin-shaped field-effect transistor. A fin-shaped field-effect transistor formed by said process is also provided.
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申请公布号 |
US2013241003(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201213418367 |
申请日期 |
2012.03.13 |
申请人 |
LIN CHIEN-TING;CHIANG WEN-TAI |
发明人 |
LIN CHIEN-TING;CHIANG WEN-TAI |
分类号 |
H01L27/088;H01L21/28 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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