| 摘要 |
According to one embodiment, there is provided a magnetic storage apparatus that includes a magnetic resistance effect element with a ferromagnetic storage layer and a ferromagnetic reference layer, and a selective transistor connected to the magnetic resistance effect element. The magnetic resistance effect element has a resistance varied in accordance with a magnetization state of the ferromagnetic storage layer. The selective transistor is connected to the magnetic resistance effect element. The gate electrode of the selective transistor at least has a portion formed of a ferromagnetic layer magnetized in a direction opposite to the direction of magnetization of the ferromagnetic reference layer.
|
