发明名称 |
SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING SAME |
摘要 |
A method of manufacturing a semiconductor element includes forming a first bonding layer containing a metal, which forms a eutectic crystal with Au, on a first substrate to provide a first laminated body. The method also includes forming an element structure layer having a semiconductor layer on a second substrate. The method also includes forming a second bonding layer on the element structure layer to provide a second laminated body. The second bonding layer has a metal underlayer containing a metal, which forms a eutectic crystal with Au. The second bonding layer also has a surface layer that contains Au. The method also includes performing heating pressure-bonding on the first and second laminated bodies with the first and second bonding layers facing each other. The heating temperature of the second substrate in the heating pressure-bonding is higher than the heating temperature of the first substrate. |
申请公布号 |
US2013241061(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201313845078 |
申请日期 |
2013.03.17 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
CHINONE TAKAKO;MIYACHI MAMORU;SAITO TATSUMA;AKAGI TAKANOBU |
分类号 |
H01L21/02;H01L29/45 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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