发明名称 |
SEMICONDUCTOR DEVICE HAVING BURIED BIT LINE, AND METHOD FOR FABRICATING THE SAME |
摘要 |
A method for fabricating a semiconductor device includes forming at least one body having two sidewalls by vertically etching a semiconductor substrate, forming a protective layer having open parts that expose portions of the both sidewalls of the body, forming a buffer layer that fills the open parts, and forming a buried bit line in the body by siliciding the buffer layer and a portion of the body between the buffer layer. |
申请公布号 |
US2013240965(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201213494333 |
申请日期 |
2012.06.12 |
申请人 |
PARK EUN-SHIL;MYUNG JU-HYUN |
发明人 |
PARK EUN-SHIL;MYUNG JU-HYUN |
分类号 |
H01L27/088;H01L21/20;H01L21/336 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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