COMPOSITE GALLIUM NITRIDE BASED SEMICONDUCTOR GROWING SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

Provided is a composite gallium nitride based semiconductor growing substrate, comprising: a base plate (100, 200); a lattice buffer layer (110, 210) formed on quartz glass (100) and consisting of Diamond-Like Carbon (DLC); and a lattice conversion layer (120, 220) formed on the lattice buffer layer (110, 210), and having a polycrystalline structure and a lattice coefficient between GaN and DLC. When common base plates such as quartz glass or metal base plate are used to grow a gallium nitride based semiconductor material, lattice mismatch and thermal mismatch occur. The present invention solves such problems by combining the DLC with a nitride, thus reducing the cost of existing gallium nitride based semiconductor growing substrate, while improving the quality of subsequently growing gallium nitride based semiconductor material.