| 摘要 |
PROBLEM TO BE SOLVED: To improve RBSOA (Reverse Bias Safe Operation Area) of a vertical trench IGBT.SOLUTION: A vertical trench IGBT manufacturing method comprises: forming a p type body layer 3 above an ntype Si substrate 1; forming trenches which pierce the p type body layer 3; forming a trench gate 4 in the trench via a gate insulation film 5; forming a polysilicon film 16 containing an n type impurity on the p type body layer 3; diffusing n type impurity from the polysilicon film 16 to the p type body layer 3 to form an n type emitter layer 6 on the p type body layer 3; and forming a p type collector layer 13 below an undersurface of the ntype Si substrate 1. |
