| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device with a structure that attains both suppression of current collapse and reduction in a gate leakage current.SOLUTION: A semiconductor device includes: a semiconductor layer 10 composed of a group III-V nitride semiconductor; a first silicon nitride film 12 formed on the semiconductor layer 10; a gate electrode 14 formed on the first silicon nitride film 12; a source electrode 16 and a drain electrode 18 formed on the semiconductor layer 10 so as to sandwich the gate electrode 14; and a second silicon nitride film 20 formed between the source electrode 16 and the gate electrode 14 and between the drain electrode 18 and the gate electrode 14, and having lower oxygen atom density than the first silicon nitride film 12. |
