发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve improvement in productivity.SOLUTION: A semiconductor device according to an embodiment comprises: a layered stack in which a plurality of conductive layers and a plurality of insulation layers are alternately stacked one by one; a plurality of contact electrodes which extend in a stacking direction of the layered stack and which reach the corresponding conductive layer; first insulation parts provided between the contact electrodes and the layered stack; and second insulation parts provided between the first insulation part and the layered stack. Each of the second insulation parts is formed in a cylindrical shape with a bottom, and the contact electrodes penetrate the bottoms of the second insulation parts to reach the corresponding conductive layer. A material of the second insulation parts is a material where an etching rate becomes lower than that of a material of the first insulation parts when etching the first insulation parts. |
申请公布号 |
JP2013187335(A) |
申请公布日期 |
2013.09.19 |
申请号 |
JP20120051026 |
申请日期 |
2012.03.07 |
申请人 |
TOSHIBA CORP |
发明人 |
IINO HIROMITSU;IGUCHI SUNAO |
分类号 |
H01L21/8247;H01L21/336;H01L21/768;H01L23/522;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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