发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve improvement in productivity.SOLUTION: A semiconductor device according to an embodiment comprises: a layered stack in which a plurality of conductive layers and a plurality of insulation layers are alternately stacked one by one; a plurality of contact electrodes which extend in a stacking direction of the layered stack and which reach the corresponding conductive layer; first insulation parts provided between the contact electrodes and the layered stack; and second insulation parts provided between the first insulation part and the layered stack. Each of the second insulation parts is formed in a cylindrical shape with a bottom, and the contact electrodes penetrate the bottoms of the second insulation parts to reach the corresponding conductive layer. A material of the second insulation parts is a material where an etching rate becomes lower than that of a material of the first insulation parts when etching the first insulation parts.
申请公布号 JP2013187335(A) 申请公布日期 2013.09.19
申请号 JP20120051026 申请日期 2012.03.07
申请人 TOSHIBA CORP 发明人 IINO HIROMITSU;IGUCHI SUNAO
分类号 H01L21/8247;H01L21/336;H01L21/768;H01L23/522;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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