发明名称 |
METHODS FOR DEPOSITING A TIN-CONTAINING LAYER ON A SUBSTRATE |
摘要 |
<p>Methods of depositing a tin-containing layer on a substrate are disclosed herein. In some embodiments, a method of depositing a tin-containing layer on a substrate may include flowing a tin source comprising a tin halide into a reaction volume; flowing a hydrogen plasma into the reaction volume; forming one or more tin hydrides within the reaction volume from the tin source and the hydrogen plasma; and depositing the tin-containing layer on a first surface of the substrate using the one or more tin hydrides.</p> |
申请公布号 |
WO2013138069(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
WO2013US28162 |
申请日期 |
2013.02.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SANCHEZ, ERROL ANTONIO C.;HUANG, YI-CHIAU |
分类号 |
C23C16/50;C23C16/44 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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