NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory element which reduces a break voltage and inhibits variations of break voltages between elements having nonvolatile memory characteristics.SOLUTION: A nonvolatile memory element 100 includes: a first electrode 106; a level difference formation layer 107 that is disposed covering a first region on a main surface of the first electrode 106; a resistance change layer 111 which is disposed covering a second region on the main surface of the first electrode 106 which is not covered by the level difference formation layer 107, a main surface of the level difference formation layer 107, and a level difference surface 116 connecting the second region with the main surface of the level difference formation layer 107; and a second electrode 110 disposed on the resistance change layer 111. The resistance change layer 111 has a first resistance change layer 108 and a second resistance change layer 109 which has a bending part 117 above the level difference surface 116.