| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing apparatus and a manufacturing method of a semiconductor device, which can prevent a contaminated ion other than an intended ion to be implanted into a substrate.SOLUTION: A manufacturing apparatus of a semiconductor device according to an embodiment comprises an electrode generation part, a gas introduction part and an atmospheric pressure adjustment part. The electron generation part generates an electron used in the case where an intended ion is implanted into a substrate in a predetermined processing chamber. The gas introduction part introduces to the inside of the processing chamber, a gas containing an element which combines with a contaminated ion generated inside the processing chamber. The atmospheric pressure adjustment part decreases an atmospheric pressure inside the processing chamber to an atmospheric pressure lower than an atmospheric pressure outside the processing chamber. |
