发明名称 |
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE |
摘要 |
A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
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申请公布号 |
US2013244406(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201313777547 |
申请日期 |
2013.02.26 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KASAI HITOSHI;OKAHISA TAKUJI;FUJITA SHUNSUKE;MATSUMOTO NAOKI;IJIRI HIDEYUKI;SATO FUMITAKA;MOTOKI KENSAKU;NAKAHATA SEIJI;UEMATSU KOJI;HIROTA RYU |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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地址 |
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