发明名称 |
Overvoltage Protection Device for Compound Semiconductor Field Effect Transistors |
摘要 |
An overvoltage protection device for compound semiconductor field effect transistors includes an implanted region disposed in a compound semiconductor material. The implanted region has spatially distributed trap states which cause the implanted region to become electrically conductive at a threshold voltage. A first contact is connected to the implanted region. A second contact spaced apart from the first contact is also connected to the implanted region. The distance between the first and second contacts partly determines the threshold voltage of the overvoltage protection device. |
申请公布号 |
US2013240894(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201213418833 |
申请日期 |
2012.03.13 |
申请人 |
WUERFL HANS JOACHIM;BAHAT-TREIDEL ELDAD;CHANG CHIA-TA;HILT OLIVER;ZHYTNYTSKA RIMMA |
发明人 |
WUERFL HANS JOACHIM;BAHAT-TREIDEL ELDAD;CHANG CHIA-TA;HILT OLIVER;ZHYTNYTSKA RIMMA |
分类号 |
H01L29/20;H01L21/335;H01L29/78 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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