| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer manufacturing method which can improve yield of an electronic device which is manufactured by using an epitaxial wafer in which a nitride semiconductor is formed on an Si substrate.SOLUTION: An epitaxial wafer manufacturing method comprises a first process (S1) of cleaning an Si substrate by wet etching; a second process (S2) of cleaning the Si substrate by dry etching after the first process (S1); and a third process (S3) of epitaxial growing a nitride semiconductor on the Si substrate after the second process (S2). |
