NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that allows increasing a GIDL current.SOLUTION: A nonvolatile semiconductor memory device includes: a stack having a plurality of conductive layers and a plurality of first insulating layers; a second insulating layer provided on the stack; a selection gate provided on the second insulating layer; a memory film provided on an inner wall of a memory hole; a channel body provided on an inner surface of the memory film; a first semiconductor layer provided on an end surface of the channel body; and a second semiconductor later provided on the first semiconductor layer. The first semiconductor layer contains silicon germanium into which a first impurity is added, and the second semiconductor layer contains silicon germanium into which the first impurity is added. The interface between the first semiconductor layer and the second semiconductor layer is provided above a location of a top of the selection gate. The concentration of the first impurity of the first semiconductor layer is less than 10atoms/cm, and the concentration of the first impurity of the second semiconductor layer is more than or equal to 10atoms/cm.