| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce electrical resistance between contact electrodes and conductive layers, and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device according to a present embodiment comprises: a layered stack in which a plurality of conductive layers and a plurality of first insulation layers are stacked; and a plurality of contact electrodes reaching the conductive layers. Each contact electrode includes a columnar part extending in a stacking direction of the layered stack, a stopper part covering lateral faces of the columnar part and a first connection part which is provided at a lower end of the columnar part and which contacts the conductive layer. A sectional dimension of the first connection part in a direction orthogonal to the stacking direction is larger than a sectional dimension of the lower end of the columnar part. An etching rate of a material of the stopper part is lower than an etching rate of a material of the first insulation layer. Further, an etching rate of a material of a layer provided on the first connection part is lower than the etching rate of the material of the first insulation layer. |
