发明名称 |
CONDUCTIVE FILM STRUCTURE AND CONDUCTIVE FILM TYPE PROBE DEVICE FOR ICS |
摘要 |
A method for forming a conductive film structure is provided, which includes: providing an insulating substrate having a surface; forming a plurality of trenches in the surface of the insulating substrate, wherein the trenches are extended substantially parallel to each other; disposing the insulating substrate into a plating solution and plating conducting layers within the trenches to form a plurality of micro-wires; and stacking a plurality of the insulating substrates or winding or folding the insulating substrate along an axis substantially parallel to an extended direction of the micro-wires to form a conducting lump.
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申请公布号 |
US2013241590(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201313887091 |
申请日期 |
2013.05.03 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHOU MIN-CHIEH;KAO TUNE-HUNE;TSAI JEN-HUI |
分类号 |
G01R31/28;G01R1/073 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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