发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.
申请公布号 US2013241515(A1) 申请公布日期 2013.09.19
申请号 US201313751326 申请日期 2013.01.28
申请人 RENESAS ELECTRONICS CORPORATION 发明人 YAMASHIRO MASAO;BANDO TATSUYA;KAMADA KUNITOSHI;SATO HIROSHI
分类号 G05F1/625 主分类号 G05F1/625
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