SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device in which the parasitic resistance affected by a source and a drain is reduced and the parasitic capacitance is small is provided. The semiconductor device includes a pair of semiconductor layers; a semiconductor film in contact with each of the pair of semiconductor layers; a gate electrode overlapping with the semiconductor film and at least partly overlapping with the pair of semiconductor layers; and a gate insulating film between the semiconductor film and the gate electrode. A region which is in the pair of semiconductor layers and overlaps with the gate electrode and the semiconductor film has higher resistance than regions other than the region in the pair of semiconductor layers.