METHOD OF QUANTITATIVELY CHARACTERIZING ADULTERANTS OF SILANES AND COATED SUSCEPTOR

摘要

Described herein is a method of indirectly quantitatively characterizing at least one adulterant of a silane. The method comprises etching a substrate in situ to give a very clean substrate surface, epitaxy of silicon formed from the silane on the surface, and a sensitive analysis of the resulting silicon film. Also described is a coated susceptor.