发明名称 VACUUM SUCTION STAGE, SEMICONDUCTOR WAFER DICING METHOD, AND SEMICONDUCTOR WAFER ANNEALING METHOD
摘要 <p>The purpose of the present invention is to provide a vacuum suction stage, which suppresses damages of a dicing tape when performing dicing, a semiconductor wafer dicing method using the vacuum suction stage, and a semiconductor wafer annealing method using the vacuum suction stage, which suppresses foaming of a grinding protection tape. This vacuum suction stage has a placing surface (1a) for placing a semiconductor wafer (6) thereon, and in the placing surface (1a), vacuum suction holes (2) are formed merely on the outer circumference of the chip region (6a) of the semiconductor wafer (6).</p>
申请公布号 WO2013136411(A1) 申请公布日期 2013.09.19
申请号 WO2012JP56265 申请日期 2012.03.12
申请人 MITSUBISHI ELECTRIC CORPORATION;MATSUMURA TAMIO 发明人 MATSUMURA TAMIO
分类号 H01L21/301;H01L21/02;H01L21/265;H01L21/268;H01L21/683 主分类号 H01L21/301
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