<p>A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.</p>
申请公布号
WO2013138575(A1)
申请公布日期
2013.09.19
申请号
WO2013US31267
申请日期
2013.03.14
申请人
SENSOR ELECTRONIC TECHNOLOGY, INC
发明人
GASKA, REMIGIJUS;SHATALOV, MAXIM, S.;SHUR, MICHAEL;DOBRINSKY, ALEXANDER