| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated device which can reliably prevent electrostatic discharge failure.SOLUTION: A semiconductor integrated device comprises: a semiconductor substrate on which an electrostatic protection circuit including second diffusion regions 13, 15 which respectively surround first diffusion regions 12, 14 as local regions is formed on a principal surface; a metal pad 21 opposite to the principal surface of the semiconductor substrate; conductive bumps 20 formed so as to be opposite to a top face of the metal pad; and projections 2 contacting the metal pad, which are formed on a metal pad surface opposite to the metal pad and within a region opposite to the first diffusion regions. |
