SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a variation in a threshold voltage caused by moisture absorption of a PMOS transistor, and a method for manufacturing the same.SOLUTION: A semiconductor device comprises: an insulating film 12 formed on a semiconductor substrate 11; a wiring layer 13 formed on the insulating film 12; a first TEOS film 14 formed on the wiring layer 13 and the insulating film 12; an SOG layer 15 formed on the TEOS layer 14; a second TEOS film 16 formed on the SOG layer 15; a second metal wiring layer 17 formed on the second TEOS film 16; and a protective nitride film 18 formed on the second metal wiring layer 17 and the second TEOS film 16. The film stress of the first TEOS film 14 is hither than the film stress of the second TEOS film 16. The hygroscopicity of the first TEOS film 14 is lower than the hygroscopicity of the second TEOS film 16.