| 摘要 |
PROBLEM TO BE SOLVED: To maintain the ESD breakdown voltage and to reduce the chip area of a semiconductor device.SOLUTION: A semiconductor device includes a semiconductor substrate, an output transistor, and a first semiconductor layer. The semiconductor substrate has a first conductivity type and is set to a ground potential. The output transistor is provided in a first surface and on a top surface of the semiconductor substrate, has a second-conductivity-type source layer connected to the semiconductor substrate, a second-conductivity-type drain layer connected to an output terminal, and a gate electrode receiving an input of a control signal, and outputs an output signal from a drain layer side. The first semiconductor layer has a second conductivity type, is disposed spaced apart from the source layer and the drain layer, is provided on the first surface of the semiconductor substrate, and receives the input of the control signal. |
