发明名称 |
NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME |
摘要 |
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
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申请公布号 |
US2013242667(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201313867716 |
申请日期 |
2013.04.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM SUN-IL;JANG JAE-HOON;CHAE DONGHYUK;LIM YOUNGHO;KIM HANSOO;JEONG JAEHUN |
分类号 |
G11C16/08;G11C16/12;G11C16/14;G11C16/26 |
主分类号 |
G11C16/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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