发明名称 NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME
摘要 Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
申请公布号 US2013242667(A1) 申请公布日期 2013.09.19
申请号 US201313867716 申请日期 2013.04.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM SUN-IL;JANG JAE-HOON;CHAE DONGHYUK;LIM YOUNGHO;KIM HANSOO;JEONG JAEHUN
分类号 G11C16/08;G11C16/12;G11C16/14;G11C16/26 主分类号 G11C16/08
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