发明名称 |
NONCONSECUTIVE SENSING OF MULTILEVEL MEMORY CELLS |
摘要 |
The present disclosure includes apparatuses and methods for nonconsecutive sensing of multilevel memory cells. A number of methods include sensing a unit of information from a multilevel memory cell (MLC) using a sensing signal. The unit of information can correspond to a page of information. The MLC can store a plurality of units of information corresponding to a plurality of pages of information. The sensing signal can change from a first sensing magnitude to a second sensing magnitude and from the second sensing magnitude to a third sensing magnitude. The second sensing magnitude can be nonconsecutive from the first sensing magnitude and/or the third sensing magnitude can be nonconsecutive from the second sensing magnitude with respect to a plurality of sensing magnitudes corresponding to a plurality of charge storage states of the MLC. |
申请公布号 |
WO2013134890(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
WO2012CN00314 |
申请日期 |
2012.03.13 |
申请人 |
MICRON TECHNOLOGY, INC.;XU, JUN |
发明人 |
XU, JUN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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