SEMICONDUCTOR DEVICE AND PRODUCING METHOD FOR SAME

摘要

Disclosed is a semiconductor device, comprising a substrate, multiple grid electrode stacking structures on the substrate, multiple grid electrode sidewall structures at two sides of each grid electrode stacking structure, and multiple source and drain regions in the substrate at two sides of each grid electrode sidewall structure. Multiple grid electrode stacking structures comprise multiple first grid electrode stacking structures and multiple second grid electrode stacking structures. The first grid electrode stacking structure comprises a first grid electrode insulating layer, a first work function metal layer, a second work function metal diffusion barrier layer, and a grid electrode packing layer. The work function approaches a valence band (conduction band) edge. The second grid electrode stacking structure comprises a second grid electrode insulating layer, a modified first work function metal layer, a second work function metal layer, and a grid electrode packing layer. The second work function metal layer comprises injected doping ions for adjusting the work function, and part of the ions diffuses to a first work function layer adjustment threshold, so that a work function of the grid electrode approaches the conduction band (valence band) edge, and is opposite to the original first work function, thereby accurately adjusting the grid electrode work function.