| 摘要 |
In one embodiment, a solid-state image capturing element of an embodiment has: a semiconductor substrate; a photodiode formed on the semiconductor substrate; a capacitor formed on the semiconductor substrate and including a first electrode layer, an insulating layer, and a second electrode layer which are stacked in sequence; a transistor formed on the semiconductor substrate and including a floating gate and a control gate; and a first electrode portion electrically connecting the second electrode layer and an n-type diffusion layer or a p-type diffusion layer constituting the photodiode. Further, the first electrode layer of the capacitor is constituted by the floating gate of the transistor, and the second electrode layer of the capacitor and the control gate of the transistor are discontinuous. |
