发明名称 |
METHOD OF PROGRAMMING MEMORY CELLS AND READING DATA, MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME |
摘要 |
A method of programming memory cells for a rewritable non-volatile memory module is provided. The method includes: receiving a command which indicates performing an update operation to a logical page; and identifying valid logical access addresses and invalid logical access addresses in the logical page according to the command. The method also includes: selecting a physical page; setting flags corresponding to the valid logical access addresses in a valid state, setting flags corresponding to the invalid logical access in an invalid state; programming the flags and data belonging to the valid logical access addresses to the selected physical page based on the update operation; and mapping the selected physical page to the logical page. Accordingly, the method can effectively increase the speed of programming the memory cells.
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申请公布号 |
US2013246732(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201213528840 |
申请日期 |
2012.06.21 |
申请人 |
SENG KIAN-FUI;TSENG MING-HUI;WANG CHING-HSIEN;PHISON ELECTRONICS CORP. |
发明人 |
SENG KIAN-FUI;TSENG MING-HUI;WANG CHING-HSIEN |
分类号 |
G06F12/02;G06F12/14 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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