摘要 |
A non-volatile memory and a method of fabricating the same, more particularly, a non-volatile memory in which memory cells each includes an anti-fuse and a diode or a variable resistor and a diode are stacked in a multilayer laminate structure without increasing a horizontal area, to effectively utilize a vertical space and thereby significantly increase a degree of integration so that the memory cells are able to be highly integrated and perform high-speed operation, and a method of fabricating the non-volatile memory.
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