| 摘要 |
A nonvolatile memory device includes a first film layer formed on a substrate, and a second film layer formed on the first film layer. The second film layer comprises a first oxide material having a first oxygen content, and a second oxide material disposed laterally of the first oxide material and having a second oxygen content that is greater than the first oxygen content. The memory device also includes a third film layer formed on the second film layer, and the third film layer is disposed on the first oxide material and exposes portions of the second oxide material.
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