| 摘要 |
The invention relates to a method for manufacturing a semiconductor wafer (1) including a conductive via extending from a main surface (2) of the wafer, said via having a shape factor greater than five, said wafer (1) including a dielectric layer (6), the method including: producing, by means of deep etching, at least one recess in the semiconductor wafer (1), said recess extending from the main surface (2) of the wafer (1) and having a shape factor greater than five, the recess including a side surface; forming at least one dielectric layer (6) in said recess, including two treatments in a controlled-pressure reactor, one of said treatments including the chemical vapor deposition, at sub-atmospheric pressure, of a dielectric onto the side surface of the recess, the chemical deposition being carried out at a temperature lower than 400°C and at a pressure greater than 100 Torr in said reactor, and another of said treatments including the plasma-enhanced chemical vapor deposition of a dielectric onto the side surface of the recess, the chemical deposition being carried out at a pressure of less than 20 Torr in said reactor; and filling the recess with a conductive material (8), thus forming a via. |
