| 摘要 |
To provide a mask blank which can eliminate pattern defects by preventing a resist pattern from disappearing at the time of manufacturing a transfer mask in semiconductor design rule (DRAM hp65 nm or below), and to provide a mask. A mask blank including a thin film for forming a mask pattern, the thin film being formed on a substrate, and a resist film formed over the thin film, wherein the thin film and the resist film sandwich an adhesion layer that is bonded to the thin film and the resist film, and the adhesion layer prevents, during development of the resist film in patterning of the resist film, collapse of the patterned resist film. |
