Capacitive pressure sensor

摘要

A first silicon substrate is bonded to one principal surface of a glass substrate. In a cavity in the other principal surface of the glass substrate, a protruding portion is formed. In the first silicon substrate, a protruding portion is disposed inside the cavity, and a protruding portion is disposed outside the cavity. A fixed electrode is formed on the protruding portion of the glass substrate. On the protruding portion, an electrode pad is formed with a contact layer and a seed layer therebetween. A second silicon substrate that has a diaphragm corresponding to a movable electrode of a capacitive pressure sensor is bonded to a bonding surface of the other principal surface of the glass substrate (region other than a recessed portion).