发明名称 Semiconductor device and its method of manufacturing
摘要 <p>A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.</p>
申请公布号 EP1918995(B1) 申请公布日期 2013.09.18
申请号 EP20070021194 申请日期 2007.10.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;KATAYAMA, MASAHIRO;OIKAWA, YOSHIAKI;HIROSE, ATSUSHI;SAKAKURA, MASAYUKI
分类号 H01L27/144;H01L27/32;H01L31/02;H01L31/0216;H01L31/0224;H01L31/0232;H01L31/105;H01L31/18;H01M10/46;H02J7/02;H03F3/08 主分类号 H01L27/144
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