FORMATION OF SIOCL-CONTAINING LAYER ON SPACER SIDEWALLS TO PREVENT CD LOSS DURING SPACER ETCH

摘要

PURPOSE: A method for forming a SiOCl-containing layer on a spacer sidewall to prevent CD loss during a spacer etching process is provided to easily perform an etching process by removing the anisotropy of a material. CONSTITUTION: A gate structure on a substrate (310) is covered with conformal spacer materials. A spacer etching process is performed (320). A sidewall spacer is positioned along the sidewall of the gate structure. A part of the spacer material is removed while the sidewall spacer is maintained. The anisotropy of a spacer protection layer and the spacer material is selectively removed. [Reference numerals] (310) Gate structure on a substrate is covered with conformal spacer materials in an equiangular manner; (320) Spacer etching process is performed to remove partially the spacer materials on the surface of the substrate near the base and upper part of the gate structure while a side wall spacer located along the side wall of the gate structure is maintained