| 摘要 |
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×10 13 ; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×10 13 , and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and a haze level of the surface (3) is not more than 5 ppm. |
