SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve crystallization by performing an active epitaxial growth process on the front surface of a substrate. CONSTITUTION: A first semiconductor layer (118) has a first conductivity type. The first semiconductor layer is extended in a first direction. Second semiconductor layers (122) are separated from each other in the first direction. The second semiconductor layer has a second conductivity type. An insulating layer structure (130) surrounds the sidewalls of the first semiconductor layer and the second semiconductor layers and.