COMPOSITION FOR FORMING RESIST LOWER LAYER FILM AND METHOD FOR FORMING PATTERN

摘要

PURPOSE: A resist underlayer formation composition is provided to be used in a lithographic process for miniaturizing. CONSTITUTION: A resist underlayer formation composition contains polysiloxane and an organic solvent. The organic solvent contains an organic solvent having the standard boiling point greater than 150.0°C, and water. The content of the organic solvent is 1-50 mass%, and the content of water is 1-30 mass%. A pattern formation method comprises the following steps: forming a resist underlayer on a non-processed substrate using the resist underlayer formation composition; forming a resist film on the resist underlayer using a resist composition; exposing the resist film by the radiation irradiation using a mask; forming a resist pattern by developing the exposed resist film; and dry-etching the resist underlayer and the non-processed substrate using the resist pattern as a mask.