GAN-BASED SEMICONDUCTOR LIGHT EMITTING DIODE INCLUDING NANOPOROUS AND FABRICATING METHOD FOR THE SAME

摘要

PURPOSE: A GaN-based semiconductor light emitting diode including nanopores and a method for fabricating the same are provided to improve light emission by using a wet etching process. CONSTITUTION: A GaN-based semiconductor layer(20) is formed on a substrate(50). An ITO layer(10) is laminated on the GaN-based semiconductor layer. A nanoporous is formed in the ITO layer. A groove is formed in the surface of the ITO layer by using a wet etching process. An electrode pad is formed in the GaN-based semiconductor layer.