发明名称 |
Semiconductor structure and fabrication method thereof |
摘要 |
A semiconductor structure includes a semiconductor substrate having thereon a plurality of deep trenches and a plurality of pillar structures between the deep trenches, wherein each of the plurality of pillar structures comprises an upper portion and a lower portion. A doping region is formed in the lower portion. A diffusion barrier layer is disposed on a sidewall of the lower portion.
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申请公布号 |
US8536635(B1) |
申请公布日期 |
2013.09.17 |
申请号 |
US201213469104 |
申请日期 |
2012.05.11 |
申请人 |
YU CHIEN-AN;CHANG YUAN-SUNG;CHEN FENG-LING;CHIEN CHUN-HUNG;NANYA TECHNOLOGY CORP. |
发明人 |
YU CHIEN-AN;CHANG YUAN-SUNG;CHEN FENG-LING;CHIEN CHUN-HUNG |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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