| 摘要 |
A semiconductor device is disclosed. The semiconductor device includes a plurality of memory cells provided in a matrix and having a charge storage layer, a plurality of word lines provided on the charge storage layer, and an application section. When reading data from a selected memory cell selected from the plurality of memory cells, the application section applies a voltage having an opposite polarity to the voltage applied to a selected word line to non-selected word lines arranged on both adjacent sides of the selected word line.
|
